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德國(guó)Fraunhofer IZM  
弗勞恩霍夫協(xié)會(huì)可靠性和微集成研究所多設(shè)備集成部于1998 年成立于德國(guó)薩克森地區(qū)的開(kāi)姆尼斯市。基礎(chǔ)領(lǐng)域是微（納米）機(jī)電系統(tǒng)(MEMS) 的開(kāi)發(fā)、在硅片和其他材料上制造微機(jī)電系統(tǒng)的技術(shù)和設(shè)備。未來(lái)，該部門(mén)還將研究應(yīng)用于未來(lái)微電子、納米電子、印刷電子系統(tǒng)的后段制程技術(shù)，這一技術(shù)將普遍降低智能系統(tǒng)的應(yīng)用成本，檢驗(yàn)智能系統(tǒng)的微觀(guān)可靠性和納米可靠性。不久的將來(lái)，該系統(tǒng)將具有更多的功能，例如：運(yùn)用硅技術(shù)或非硅技術(shù)將信號(hào)傳輸過(guò)程、信息傳輸過(guò)程中的電子與傳感器、制動(dòng)器整合在一起。我們的理念就是讓所謂的多設(shè)備集成系統(tǒng)越來(lái)越小。
主要研究活動(dòng)：
設(shè)計(jì)、開(kāi)發(fā)微機(jī)電系統(tǒng)
● 微機(jī)電系統(tǒng)設(shè)計(jì)、成型
● 傳感器、制動(dòng)器、電子（例如：加速傳感器、回轉(zhuǎn)儀、掃描儀）
● 變頻器、分析器（即：分光計(jì)、超聲）
● 測(cè)量和表征
后段制程(BOEL)
● 旋布絕緣層、氣隙結(jié)構(gòu)、低介電值集成
● 銅互連鍍金屬設(shè)備（例如：45 納米間距）、擴(kuò)散障礙層
● 尺寸縮小帶來(lái)的影響、可靠性、成型和仿真
高級(jí)技術(shù)開(kāi)發(fā)
● 3D 成型、深硅刻蝕、引線(xiàn)合鍵、硅片鍵合、晶片鍵合技術(shù)
● 化學(xué)機(jī)械拋光
● 微機(jī)電系統(tǒng)晶圓級(jí)封裝
微系統(tǒng)可靠性和納米可靠性
● 微系統(tǒng)可靠性，如：汽車(chē)制造領(lǐng)域和IT 領(lǐng)域內(nèi)的微系統(tǒng)可靠性
● 可靠性、小型化與微型安全的結(jié)合
● 熱機(jī)仿真和納米可靠性
The department Multi Device Integration was founded in 1998 and is located in Chemnitz,
Saxony. Its basic fields are the development of Micro-(Nano)-Electro-Mechanical-Systems
(MEMS), technologies and equipment for manufacturing MEMS in silicon and other
materials. Further research fields are back-end-of-line technologies for future micro and nano
electronics, printed electronic systems for ubiquitous low-cost applications and investigation
of micro and nano reliability for smart systems. In near future Microsystems will be quite
more multifunctional e. g. the integrated combination of electronics for signal and information
processing with sensors and actuators in silicon and nonsilicon technologies. The so called
multi device integration to smaller and smarter systems is our vision.
Main Research Activities:
Design and Development of MEMS
● MEMS design and modelling
● Sensors, actuators, and electronics (e. g. acceleration sensors, gyroscopes, scanner)
● Transducer and analyzer systems (i. e. spectrometer, ultra sonic)
● Measurement and characterization
Back-End-of-Line BEOL
● Spin-on dielectrics, Air Gap structures, and integration of low-k dielectrics
● Copper interconnect metallization systems (e.g. 45nm pitches) and diffusion barriers,
● Scaling effects, reliability, modelling and simulation
Development of Advanced Technologies
● 3D-patterning, deep silicon etching and wire, chip and wafer bonding technologies,
● Chemical mechanical planarization (CMP)
● MEMS Packaging at wafer level
Micro and Nano Reliability
● Reliability for Microsystems e. g. for Automotive and IT applications
● Combination of Reliability, Miniaturization and Microsecurity
● Thermomechanical Simulation and Reliability for Nanoelectronics
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總部
Fraunhofer IZM
Chemnitz Branch of the Institute
Multi Device Integration
Reichenhainer Strasse 88
D-09126 Chemnitz